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| PD-91855B SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 15LJQ100 JANS1N6844U3 JANTX1N6844U3 JANTXV1N6844U3 15A, 100V REF: MIL-PRF-19500/679 Description/Features The1N6844U3 Schottky rectifier has been expressly designed to meet the rigorous requirements of Hirel environments. It is packaged in the hermetic surface mount SMD-0.5 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source controlled drawings to S, TX and TXV levels. * Hermetically Sealed * Low Forward Voltage Drop * High Frequency Operation * Guard Ring for Enhanced Ruggedness and Long Term Reliability * Surface Mount * Lightweight Major Ratings and Characteristics Characteristics IF(AV) Rectangular Waveform VRRM IFSM @tp = 8.3ms half-sine VF @15Apk, TJ =125C Limits 15 100 250 0.72 Units A V A V C TJ, Tstg Operating and Storage -65 to 150 CASE STYLE ( ISOLATED BASE ) CATHODE ANODE ANODE Case Outline and Dimensions - SMD-0.5 www.irf.com 1 09/08/05 15LJQ100, 1N6844U3 Voltage Ratings Part number VR VRWM Max. DC Reverse Voltage (V) Max. Working Peak Reverse Voltage (V) 1N6844U3 100 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 250 A @ t p = 8.3 ms half-sine Limits 15 Units A Conditions 50% duty cycle @ TC = 125C, rectangular waveform Electrical Specifications Parameters V FM Max. Forward Voltage Drop See Fig. 1 Limits 0.70 0.90 1.0 0.58 0.72 0.85 Units V V V V V V A mA pF nH @ 5.0A @ 15A @ 20A @ 5.0A @ 15A @ 5.0A TJ = 25C TJ = 125C Conditions TJ = 25C TJ =1 25C TJ = -55C VR = rated VR I RM CT LS Max. Reverse Leakage Current See Fig. 2 Max. Junction Capacitance Typical Series Inductance 50 10 600 4.8 VR = 5VDC ( 1MHz, 25C ) Measured from center of cathode pad to center of anode pad Thermal-Mechanical Specifications Parameters TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case wt Weight (Typical) Die Size Case Style Pulse Width < 300s, Duty Cycle < 2% 1.0 125X125 SMD-0.5 g mils Limits Units -65 to 150 -65 to 150 2.0 C C C/W DC operation Conditions RthJC Max. Thermal Resistance, Junction See Fig. 4 2 www.irf.com 15LJQ100, 1N6844U3 1000 Reverse Current - I R (mA) 100 10 1 0.1 0.01 0.001 0.0001 0 TJ = 175C 150C 125C 75C 50C 25C A 20 40 60 80 100 100 Reverse Voltage - V R (V) Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C TJ = -55C Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage 1000 Junction Capacitance - C 1 T (pF) TJ = 25C 0.1 0.0 0.5 1.0 1.5 100 0 20 40 60 80 A 100 Forward Voltage Drop - V FM (V) Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Max. Forward Voltage Drop Characteristics www.irf.com 3 15LJQ100, 1N6844U3 10 Thermal Response ( Z thJC ) 1 D = 0.5 D = 0.4 D = 0.3 D = 0.2 D = 0.1 0.1 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 0.01 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics 160 Allowable Case Temperature - (C) 140 120 100 80 60 40 20 0 0 5 10 R thJC (DC) = 2C/W DC Square Wave (D=0.50) 80% Rated VR applied 15 20 25 Average Forward Current - I F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/05 4 www.irf.com |
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